Wyniki wyszukiwania: sd12
| NO. | Symbol elementu | Rozmiar pliku | Stron | Opis dokumentacji | Producent |
|---|---|---|---|---|---|
| 1. | 1.4KESD12 |
173 KB |
4 | Transient Voltage Suppressor | Microsemi |
| 2. | 1.4KESD12 |
173 KB |
4 | Transient Voltage Suppressor | Microsemi |
| 3. | 1.4KESD12 |
173 KB |
4 | Transient Voltage Suppressor | Microsemi |
| 4. | 1.4KESD12 |
173 KB |
4 | Transient Voltage Suppressor | Microsemi |
| 5. | 1.4KESD12 |
173 KB |
4 | AXIAL-LEAD TVS | Microsemi |
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| 6. | 1.4KESD120 |
173 KB |
4 | Transient Voltage Suppressor | Microsemi |
| 7. | 1.4KESD120A |
173 KB |
4 | Transient Voltage Suppressor | Microsemi |
| 8. | 1.4KESD120C |
173 KB |
4 | Transient Voltage Suppressor | Microsemi |
| 9. | 1.4KESD12A |
173 KB |
4 | Transient Voltage Suppressor | Microsemi |
| 10. | 1.4KESD12C |
173 KB |
4 | Transient Voltage Suppressor | Microsemi |
| 11. | 14KESD12 |
158 KB |
4 | Transient Voltage Suppressor | Microsemi |
| 12. | 14KESD12 |
158 KB |
4 | AXIAL-LEAD TVS | Microsemi |
| 13. | 14KESD120 |
158 KB |
4 | Transient Voltage Suppressor | Microsemi |
| 14. | 14KESD120A |
158 KB |
4 | Transient Voltage Suppressor | Microsemi |
| 15. | 14KESD12A |
158 KB |
4 | Transient Voltage Suppressor | Microsemi |
| 16. | 2SD1205 |
61 KB |
3 | NPN Transistor darlington | Panasonic |
| 17. | 2SD1207 |
119 KB |
4 | High-current switch | Sanyo |
| 18. | 2SD1209(K) |
30 KB |
6 | Silicon NPN Darlington Transistor | Hitachi |
| 19. | 2SD1209(K) |
63 KB |
6 | Silicon NPN Epitaxial, Darlington | Renesas |
| 20. | 2SD1211 |
63 KB |
3 | NPN Transistor | Panasonic |
| 21. | 2SD1212 |
120 KB |
4 | High-current switch | Sanyo |
| 22. | 2SD1213 |
116 KB |
4 | High-current switch | Sanyo |
| 23. | 2SD1220 |
208 KB |
4 | - | Toshiba |
| 24. | 2SD1220 |
156 KB |
5 | Transistor Silicon NPN Epitaxial Type (PCT Process) | Toshiba |
| 25. | 2SD1221 |
183 KB |
4 | - | Toshiba |
| 26. | 2SD1221 |
146 KB |
4 | Transistor Silicon NPN Diffused Type (PCT Process) | Toshiba |
| 27. | 2SD1222 |
206 KB |
5 | - | Toshiba |
| 28. | 2SD1222 |
157 KB |
5 | Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington) | Toshiba |
| 29. | 2SD1223 |
207 KB |
5 | - | Toshiba |
| 30. | 2SD1223 |
158 KB |
5 | Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington) | Toshiba |
| 31. | 2SD1224 |
209 KB |
5 | - | Toshiba |
| 32. | 2SD1224 |
159 KB |
5 | Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington) | Toshiba |
| 33. | 2SD1229 |
126 KB |
4 | General-purpose driver | Sanyo |
| 34. | 2SD1230 |
151 KB |
4 | General-purpose driver | Sanyo |
| 35. | 2SD1235 |
117 KB |
4 | High-current switch | Sanyo |
| 36. | 2SD1236L |
149 KB |
4 | High-current switch | Sanyo |
| 37. | 2SD1237L |
143 KB |
4 | High-current switch | Sanyo |
| 38. | 2SD1238L |
104 KB |
4 | High-current switch | Sanyo |
| 39. | 2SD1244 |
50 KB |
3 | NPN Transistor | Panasonic |
| 40. | 2SD1246 |
85 KB |
3 | High-current switch | Sanyo |
| 41. | 2SD1247 |
89 KB |
3 | High-current switch | Sanyo |
| 42. | 2SD1249 |
53 KB |
3 | NPN Transistor | Panasonic |
| 43. | 2SD1250 |
53 KB |
3 | NPN Transistor | Panasonic |
| 44. | 2SD1251 |
49 KB |
3 | NPN Transistor | Panasonic |
| 45. | 2SD1252 |
51 KB |
3 | NPN Transistor | Panasonic |
| 46. | 2SD1253 |
51 KB |
3 | NPN Transistor | Panasonic |
| 47. | 2SD1254 |
58 KB |
4 | NPN Transistor | Panasonic |
| 48. | 2SD1256 |
58 KB |
4 | NPN Transistor | Panasonic |
| 49. | 2SD1257 |
60 KB |
4 | NPN Transistor | Panasonic |
| 50. | 2SD1258 |
47 KB |
3 | NPN Transistor | Panasonic |
| 51. | 2SD1259 |
48 KB |
3 | NPN Transistor | Panasonic |
| 52. | 2SD1260 |
66 KB |
3 | NPN Transistor Darlington | Panasonic |
| 53. | 2SD1261 |
68 KB |
3 | NPN Transistor Darlington | Panasonic |
| 54. | 2SD1262 |
66 KB |
3 | NPN Transistor Darlington | Panasonic |
| 55. | 2SD1263 |
63 KB |
3 | NPN Transistor | Panasonic |
| 56. | 2SD1264 |
49 KB |
3 | NPN Transistor | Panasonic |
| 57. | 2SD1266 |
103 KB |
4 | Silicon NPN Power Transistors | Inchange Semiconductor |
| 58. | 2SD1266A |
50 KB |
2 | Silicon PNP epitaxial planar type(For low-frequency power amplification) | Panasonic Semiconductor |
| 59. | 2SD1267 |
50 KB |
3 | NPN Transistor | Panasonic |
| 60. | 2SD1268 |
50 KB |
3 | NPN Transistor | Panasonic |
| 61. | 2SD1269 |
74 KB |
4 | NPN Transistor | Panasonic |
| 62. | 2SD1270 |
74 KB |
4 | NPN Transistor | Panasonic |
| 63. | 2SD1271 |
59 KB |
4 | NPN Transistor | Panasonic |
| 64. | 2SD1272 |
63 KB |
3 | NPN Transistor | Panasonic |
| 65. | 2SD1275 |
65 KB |
3 | NPN Transistor Darlington | Panasonic |
| 66. | 2SD1276 |
65 KB |
3 | NPN Transistor Darlington | Panasonic |
| 67. | 2SD1277 |
67 KB |
3 | NPN Transistor Darlington | Panasonic |
| 68. | 2SD1280 |
59 KB |
4 | NPN Transistor | Panasonic |
| 69. | 2SD1286 |
226 KB |
4 | Silicon NPN Transistor | NEC |
| 70. | 2SD1294 |
209 KB |
4 | - | Toshiba |
| 71. | F1892SD1200 |
1.00 MB |
4 | Power Modules | Crydom |
| 72. | ISD1200 |
166 KB |
4 | Single-Chip Voice Record/Playback Devices 10- and 12-Second Durations Front Matter and TOC | Winbond |
| 73. | ISD1200 |
422 KB |
10 | Single-Chip Voice Record/Playback Devices 10- and 12-Second Durations Data Sheet Body | Winbond |
| 74. | ISD1200 |
450 KB |
11 | Single-Chip Voice Record/Playback Devices 10- and 12-Second Durations Data Sheet Body | Winbond |
| 75. | KSD1221 |
39 KB |
4 | NPN Epitaxial Silicon Transistor | Fairchild |
| 76. | KSD1222 |
39 KB |
4 | NPN Epitaxial Silicon Transistor | Fairchild |
| 77. | KSD1273 |
61 KB |
5 | NPN Epitaxial Silicon Transistor | Fairchild |
| 78. | LSD12001SRA |
300 KB |
7 | LED Displays Numeric 7-segment | Plus Opto |
| 79. | MLL1.4KESD12 |
211 KB |
4 | Transient Voltage Suppressor | Microsemi |
| 80. | MLL1.4KESD12 |
211 KB |
4 | SURFACE MOUNT TVS | Microsemi |
| 81. | MLL1.4KESD120 |
211 KB |
4 | SURFACE MOUNT TVS | Microsemi |
| 82. | MLL1.4KESD120A |
211 KB |
4 | Transient Voltage Suppressor | Microsemi |
| 83. | MLL1.4KESD120C |
211 KB |
4 | Transient Voltage Suppressor | Microsemi |
| 84. | MLL1.4KESD120CA |
211 KB |
4 | Transient Voltage Suppressor | Microsemi |
| 85. | MLL1.4KESD12A |
211 KB |
4 | Transient Voltage Suppressor | Microsemi |
| 86. | MLL1.4KESD12C |
211 KB |
4 | Transient Voltage Suppressor | Microsemi |
| 87. | MLL1.4KESD12CA |
211 KB |
4 | Transient Voltage Suppressor | Microsemi |
| 88. | MLL14KESD12 |
149 KB |
4 | Transient Voltage Suppressor | Microsemi |
| 89. | MLL14KESD12 |
149 KB |
4 | SURFACE MOUNT TVS | Microsemi |
| 90. | MLL14KESD120 |
149 KB |
4 | Transient Voltage Suppressor | Microsemi |
| 91. | MLL14KESD120 |
149 KB |
4 | SURFACE MOUNT TVS | Microsemi |
| 92. | MLL14KESD120A |
149 KB |
4 | Transient Voltage Suppressor | Microsemi |
| 93. | MLL14KESD12A |
149 KB |
4 | Transient Voltage Suppressor | Microsemi |
| 94. | PC3SD12NTZA |
49 KB |
4 | Phototriac Coupler for Triggering | Sharp |
| 95. | PM100CSD120 |
121 KB |
6 | IPMS Modules:1200V | Mitsubishi |
| 96. | PM100RSD120 |
124 KB |
6 | IPMS Modules:1200V | Mitsubishi |
| 97. | PM150CSD120 |
121 KB |
6 | IPMS Modules:1200V | Mitsubishi |
| 98. | PM150RSD120 |
124 KB |
6 | IPMS Modules:1200V | Mitsubishi |
| 99. | PM50CSD120 |
135 KB |
6 | IPMS Modules:1200V | Mitsubishi |
| 100. | PM50RSD120 |
140 KB |
6 | IPMS Modules:1200V | Mitsubishi |
| 101. | PM75CSD120 |
135 KB |
6 | IPMS Modules:1200V | Mitsubishi |
| 102. | PM75RSD120 |
140 KB |
6 | IPMS Modules:1200V | Mitsubishi |
| 103. | QSD122 |
93 KB |
4 | Plastic Silicon Infrared Phototransistor | Fairchild |
| 104. | QSD123 |
93 KB |
4 | Plastic Silicon Infrared Phototransistor | Fairchild |
| 105. | QSD124 |
93 KB |
4 | Plastic Silicon Infrared Phototransistor | Fairchild |
| 106. | SD12 |
48 KB |
5 | Application Note: Transient Immunity Standards: IEC 61000-4-x - AN96-07 | Semtech |
| 107. | SD12 |
145 KB |
6 | Single-Line TVS Diode for ESD Protection in Portable Electronics | Semtech |
| 108. | SD12 |
63 KB |
1 | Application Note: TVS Diode Selection - SI96-02 | Semtech |
| 109. | SD12 |
49 KB |
1 | Application Note: TVS Peak Pulse Power vs. Pulse Duration - SI96-03 | Semtech |
| 110. | SD12 |
41 KB |
1 | Application Note: TVS Power Derating vs. Temperature - SI96-04 | Semtech |
| 111. | SD12 |
35 KB |
1 | Application Note: Unidirectional and Bidirectional Operation - SI96-05 | Semtech |
| 112. | SD12 |
107 KB |
1 | Application Note: ESD Threat to Semiconductor Devices - SI96-11 | Semtech |
| 113. | SD12 |
54 KB |
1 | Application Note: ESD Protection -SI96-12 | Semtech |
| 114. | SD12 |
36 KB |
1 | Application Note: Transient Protection of MOSFETS - SI96-13 | Semtech |
| 115. | SD12 |
60 KB |
1 | Application Note: Calculating Transient Energy - SI97-02 | Semtech |
| 116. | SD12 |
53 KB |
1 | Application Note: Calculating Clamping Voltage at Different Peak Pulse Currents - SI97-03 | Semtech |
| 117. | SD12 |
105 KB |
2 | Application Note: Disadvantage of On-Chip Transient Protection - SI97-04 | Semtech |
| 118. | SD12 |
116 KB |
3 | Application Note: PCB Design Guidelines for ESD Suppression - SI99-01 | Semtech |
| 119. | SD1224 |
88 KB |
3 | Bipolar/LDMOS Transistor | Microsemi |
| 120. | SD1224-02 |
175 KB |
4 | Bipolar/LDMOS Transistor | Microsemi |
| 121. | SD1224-10 |
48 KB |
3 | HF SSB APPLICATIONS RF & MICROWAVE TRANSISTORS | STMicroelectronics |
| 122. | SD1274 |
1.17 MB |
4 | VHF MOBILE APPLICATIONS RF & MICROWAVE TRANSISTORS | STMicroelectronics |
| 123. | SD1274-01 |
75 KB |
7 | VHF MOBILE APPLICATIONS RF & MICROWAVE TRANSISTORS | STMicroelectronics |
| 124. | SD1275 |
87 KB |
7 | VHF MOBILE APPLICATIONS RF & MICROWAVE TRANSISTORS | STMicroelectronics |
| 125. | SD1275-01 |
75 KB |
7 | VHF MOBILE APPLICATIONS RF & MICROWAVE TRANSISTORS | STMicroelectronics |
| 126. | SD1285 |
48 KB |
3 | HF SSB APPLICATIONS RF & MICROWAVE TRANSISTORS | STMicroelectronics |
| 127. | SD12C |
48 KB |
5 | Application Note: Transient Immunity Standards: IEC 61000-4-x - AN96-07 | Semtech |
| 128. | SD12C |
147 KB |
7 | Single-Line TVS Diode for ESD Protection in Portable Electronics | Semtech |
| 129. | SD12C |
63 KB |
1 | Application Note: TVS Diode Selection - SI96-02 | Semtech |
| 130. | SD12C |
49 KB |
1 | Application Note: TVS Peak Pulse Power vs. Pulse Duration - SI96-03 | Semtech |
| 131. | SD12C |
41 KB |
1 | Application Note: TVS Power Derating vs. Temperature - SI96-04 | Semtech |
| 132. | SD12C |
35 KB |
1 | Application Note: Unidirectional and Bidirectional Operation - SI96-05 | Semtech |
| 133. | SD12C |
107 KB |
1 | Application Note: ESD Threat to Semiconductor Devices - SI96-11 | Semtech |
| 134. | SD12C |
54 KB |
1 | Application Note: ESD Protection -SI96-12 | Semtech |
| 135. | SD12C |
36 KB |
1 | Application Note: Transient Protection of MOSFETS - SI96-13 | Semtech |
| 136. | SD12C |
60 KB |
1 | Application Note: Calculating Transient Energy - SI97-02 | Semtech |
| 137. | SD12C |
53 KB |
1 | Application Note: Calculating Clamping Voltage at Different Peak Pulse Currents - SI97-03 | Semtech |
| 138. | SD12C |
105 KB |
2 | Application Note: Disadvantage of On-Chip Transient Protection - SI97-04 | Semtech |
| 139. | SD12C |
116 KB |
3 | Application Note: PCB Design Guidelines for ESD Suppression - SI99-01 | Semtech |
| 140. | SD12CT1 |
37 KB |
4 | Bi-Directional TVS diodes in SOD-323 | ON Semiconductor |