Producenci
Toshiba 14155 dokumentacji
| NO. | Symbol elementu | Rozmiar pliku | Stron | Opis dokumentacji | Producent |
|---|---|---|---|---|---|
| 2701. | DF5A8.2LF |
81 KB |
3 | - | Toshiba |
| 2702. | DF5A8.2LF |
111 KB |
3 | Diodes for Protecting against ESD Epitaxial Planar Type | Toshiba |
| 2703. | DF5A8.2LFU |
81 KB |
3 | - | Toshiba |
| 2704. | DF5A8.2LFU |
111 KB |
3 | Diodes For Protecting against ESD Epitaxial Planar Type | Toshiba |
| 2705. | DF6A6.8FU |
149 KB |
3 | Diodes for Protecting against ESD Epitaxial Planar Type | Toshiba |
| 2706. | DF8A6.2FK |
126 KB |
3 | Diodes for Protecting Against ESD Epitaxial Planar Type | Toshiba |
| 2707. | DF8A6.8FK |
133 KB |
3 | Diodes for Protecting Against ESD Epitaxial Planar Type | Toshiba |
| 2708. | Epitaxial |
100 KB |
3 | Variable Capacitance Diode | Toshiba |
| 2709. | FLG |
184 KB |
11 | DUAL-BRIDGE DRIVER IC FOR DC MOTORS | Toshiba |
| 2710. | FNG |
512 KB |
19 | Bridge Driver + Sensor AMP Single-Chip IC for DC Motors | Toshiba |
| 2711. | FNG |
253 KB |
17 | Dual Full-Bridge Driver for Stepping Motors | Toshiba |
| 2712. | GT10J301 |
468 KB |
7 | - | Toshiba |
| 2713. | GT10J301 |
460 KB |
7 | INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT | Toshiba |
| 2714. | GT10J303 |
467 KB |
7 | - | Toshiba |
| 2715. | GT10J303 |
460 KB |
7 | INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT | Toshiba |
| 2716. | GT10J311 |
464 KB |
7 | - | Toshiba |
| 2717. | GT10J311 |
457 KB |
7 | INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT | Toshiba |
| 2718. | GT10J312 |
496 KB |
7 | INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT | Toshiba |
| 2719. | GT10J312 |
480 KB |
7 | - | Toshiba |
| 2720. | GT10J312(SM) |
496 KB |
7 | INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT | Toshiba |
| 2721. | GT10J312(SM) |
480 KB |
7 | - | Toshiba |
| 2722. | GT10J321 |
229 KB |
7 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba |
| 2723. | GT10Q101 |
290 KB |
5 | - | Toshiba |
| 2724. | GT10Q101 |
193 KB |
6 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba |
| 2725. | GT10Q301 |
321 KB |
7 | - | Toshiba |
| 2726. | GT10Q301 |
195 KB |
7 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba |
| 2727. | GT15G101 |
285 KB |
4 | - | Toshiba |
| 2728. | GT15J101 |
225 KB |
4 | - | Toshiba |
| 2729. | GT15J102 |
224 KB |
4 | - | Toshiba |
| 2730. | GT15J103(SM) |
224 KB |
4 | - | Toshiba |
| 2731. | GT15J301 |
471 KB |
7 | - | Toshiba |
| 2732. | GT15J301 |
464 KB |
7 | INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT | Toshiba |
| 2733. | GT15J311 |
494 KB |
- | INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT | Toshiba |
| 2734. | GT15J311 |
480 KB |
7 | - | Toshiba |
| 2735. | GT15J311(SM) |
494 KB |
- | INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT | Toshiba |
| 2736. | GT15J311(SM) |
480 KB |
7 | - | Toshiba |
| 2737. | GT15J321 |
300 KB |
6 | - | Toshiba |
| 2738. | GT15J321 |
220 KB |
7 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba |
| 2739. | GT15J331 |
314 KB |
6 | - | Toshiba |
| 2740. | GT15J331 |
249 KB |
7 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba |
| 2741. | GT15M321 |
399 KB |
6 | - | Toshiba |
| 2742. | GT15M321 |
393 KB |
6 | INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT | Toshiba |
| 2743. | GT15Q101 |
221 KB |
4 | - | Toshiba |
| 2744. | GT15Q102 |
272 KB |
5 | - | Toshiba |
| 2745. | GT15Q102 |
196 KB |
6 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba |
| 2746. | GT15Q301 |
467 KB |
7 | - | Toshiba |
| 2747. | GT15Q301 |
460 KB |
7 | INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT | Toshiba |
| 2748. | GT15Q311 |
321 KB |
7 | - | Toshiba |
| 2749. | GT15Q311 |
198 KB |
7 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba |
| 2750. | GT20D101 |
186 KB |
4 | - | Toshiba |
| 2751. | GT20D201 |
186 KB |
4 | - | Toshiba |
| 2752. | GT20G101 |
282 KB |
- | - | Toshiba |
| 2753. | GT20G101(SM) |
281 KB |
4 | - | Toshiba |
| 2754. | GT20G102 |
278 KB |
4 | - | Toshiba |
| 2755. | GT20G102(SM) |
278 KB |
4 | - | Toshiba |
| 2756. | GT20J101 |
246 KB |
5 | - | Toshiba |
| 2757. | GT20J101 |
197 KB |
6 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba |
| 2758. | GT20J301 |
466 KB |
7 | - | Toshiba |
| 2759. | GT20J301 |
458 KB |
7 | INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT | Toshiba |
| 2760. | GT20J311 |
463 KB |
7 | - | Toshiba |
| 2761. | GT20J311 |
455 KB |
7 | INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT | Toshiba |
| 2762. | GT20J321 |
215 KB |
7 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba |
| 2763. | GT25G101 |
282 KB |
3 | - | Toshiba |
| 2764. | GT25G101 |
195 KB |
4 | INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT | Toshiba |
| 2765. | GT25G101(SM) |
283 KB |
4 | - | Toshiba |
| 2766. | GT25G101(SM) |
198 KB |
- | INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT | Toshiba |
| 2767. | GT25G102 |
282 KB |
4 | - | Toshiba |
| 2768. | GT25G102 |
182 KB |
4 | INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT | Toshiba |
| 2769. | GT25G102(SM) |
283 KB |
4 | - | Toshiba |
| 2770. | GT25G102(SM) |
198 KB |
- | INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT | Toshiba |
| 2771. | GT25J101 |
226 KB |
4 | - | Toshiba |
| 2772. | GT25J102 |
117 KB |
2 | - | Toshiba |
| 2773. | GT25Q101 |
225 KB |
4 | - | Toshiba |
| 2774. | GT25Q102 |
258 KB |
5 | - | Toshiba |
| 2775. | GT25Q102 |
192 KB |
6 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba |
| 2776. | GT25Q301 |
325 KB |
7 | - | Toshiba |
| 2777. | GT25Q301 |
195 KB |
7 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba |
| 2778. | GT30J101 |
278 KB |
5 | - | Toshiba |
| 2779. | GT30J101 |
199 KB |
6 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba |
| 2780. | GT30J121 |
199 KB |
6 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba |
| 2781. | GT30J122 |
304 KB |
5 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba |
| 2782. | GT30J301 |
476 KB |
7 | - | Toshiba |
| 2783. | GT30J301 |
469 KB |
7 | INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT | Toshiba |
| 2784. | GT30J311 |
476 KB |
7 | - | Toshiba |
| 2785. | GT30J311 |
468 KB |
7 | INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT | Toshiba |
| 2786. | GT30J322 |
411 KB |
6 | - | Toshiba |
| 2787. | GT30J322 |
404 KB |
6 | INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT | Toshiba |
| 2788. | GT30J324 |
211 KB |
7 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba |
| 2789. | GT40G121 |
256 KB |
5 | - | Toshiba |
| 2790. | GT40G121 |
177 KB |
5 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba |
| 2791. | GT40M101 |
331 KB |
5 | - | Toshiba |
| 2792. | GT40M101 |
327 KB |
5 | INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT | Toshiba |
| 2793. | GT40M301 |
381 KB |
6 | - | Toshiba |
| 2794. | GT40Q321 |
195 KB |
6 | Injection Enhanced Gate Transistor Silicon N Channel IEGT | Toshiba |
| 2795. | GT40Q322 |
186 KB |
6 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba |
| 2796. | GT40Q323 |
185 KB |
6 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba |
| 2797. | GT40T101 |
331 KB |
5 | - | Toshiba |
| 2798. | GT40T101 |
327 KB |
5 | INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE | Toshiba |
| 2799. | GT40T301 |
277 KB |
5 | - | Toshiba |
| 2800. | GT40T301 |
190 KB |
6 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba |

81 KB