Producenci
Toshiba 14155 dokumentacji
| NO. | Symbol elementu | Rozmiar pliku | Stron | Opis dokumentacji | Producent |
|---|---|---|---|---|---|
| 2801. | GT50G321 |
287 KB |
6 | - | Toshiba |
| 2802. | GT50G321 |
178 KB |
6 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba |
| 2803. | GT50J102 |
382 KB |
- | - | Toshiba |
| 2804. | GT50J102 |
378 KB |
6 | INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT | Toshiba |
| 2805. | GT50J121 |
205 KB |
6 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba |
|
|||||
| 2806. | GT50J122 |
176 KB |
6 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba |
| 2807. | GT50J301 |
390 KB |
6 | - | Toshiba |
| 2808. | GT50J301 |
385 KB |
6 | INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT | Toshiba |
| 2809. | GT50J322 |
408 KB |
6 | - | Toshiba |
| 2810. | GT50J322 |
402 KB |
6 | INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT | Toshiba |
| 2811. | GT50J325 |
218 KB |
7 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba |
| 2812. | GT5G102 |
62 KB |
2 | - | Toshiba |
| 2813. | GT5G103 |
359 KB |
5 | - | Toshiba |
| 2814. | GT5G103 |
232 KB |
5 | INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT | Toshiba |
| 2815. | GT5G131 |
213 KB |
6 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba |
| 2816. | GT5J301 |
461 KB |
7 | - | Toshiba |
| 2817. | GT5J301 |
453 KB |
7 | INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT | Toshiba |
| 2818. | GT5J311 |
458 KB |
- | INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT | Toshiba |
| 2819. | GT5J311 |
466 KB |
7 | - | Toshiba |
| 2820. | GT5J311(SM) |
458 KB |
- | INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT | Toshiba |
| 2821. | GT5J311(SM) |
466 KB |
7 | - | Toshiba |
| 2822. | GT60J321 |
265 KB |
5 | - | Toshiba |
| 2823. | GT60J321 |
163 KB |
6 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba |
| 2824. | GT60J322 |
266 KB |
5 | - | Toshiba |
| 2825. | GT60J322 |
198 KB |
6 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba |
| 2826. | GT60J323 |
200 KB |
6 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba |
| 2827. | GT60M104 |
264 KB |
5 | - | Toshiba |
| 2828. | GT60M301 |
297 KB |
6 | - | Toshiba |
| 2829. | GT60M302 |
280 KB |
6 | - | Toshiba |
| 2830. | GT60M303 |
393 KB |
6 | - | Toshiba |
| 2831. | GT60M303 |
388 KB |
6 | INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT | Toshiba |
| 2832. | GT60M322 |
190 KB |
6 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba |
| 2833. | GT60M323 |
192 KB |
6 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba |
| 2834. | GT60N321 |
295 KB |
6 | - | Toshiba |
| 2835. | GT60N321 |
196 KB |
6 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba |
| 2836. | GT60N322 |
189 KB |
6 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba |
| 2837. | GT80J101 |
339 KB |
5 | - | Toshiba |
| 2838. | GT80J101A |
221 KB |
5 | - | Toshiba |
| 2839. | GT80J101A |
161 KB |
6 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba |
| 2840. | GT8G103 |
354 KB |
5 | - | Toshiba |
| 2841. | GT8G103 |
232 KB |
5 | INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT | Toshiba |
| 2842. | GT8G121 |
359 KB |
5 | - | Toshiba |
| 2843. | GT8G121 |
234 KB |
5 | INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT | Toshiba |
| 2844. | GT8G131 |
332 KB |
5 | - | Toshiba |
| 2845. | GT8G131 |
212 KB |
6 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba |
| 2846. | GT8G132 |
213 KB |
6 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba |
| 2847. | GT8J101 |
224 KB |
4 | - | Toshiba |
| 2848. | GT8J102(SM) |
222 KB |
- | - | Toshiba |
| 2849. | GT8Q101 |
223 KB |
4 | - | Toshiba |
| 2850. | GT8Q102(SM) |
232 KB |
4 | - | Toshiba |
| 2851. | HN1A01F |
214 KB |
4 | - | Toshiba |
| 2852. | HN1A01F |
202 KB |
4 | Transistor Silicon PNP Epitaxial Type (PCT Process) | Toshiba |
| 2853. | HN1A01FU |
206 KB |
- | - | Toshiba |
| 2854. | HN1A01FU |
139 KB |
4 | Transistor Silicon PNP Epitaxial Type (PCT Process) | Toshiba |
| 2855. | HN1A02F |
104 KB |
3 | Transistor Silicon PNP Epitaxial Type (PCT Process) | Toshiba |
| 2856. | HN1A07F |
103 KB |
3 | Transistor Silicon PNP Epitaxial Type (PCT Process) | Toshiba |
| 2857. | HN1A26FS |
138 KB |
3 | Transistor Silicon PNP Epitaxial Type (PCT Process) | Toshiba |
| 2858. | HN1B01F |
339 KB |
5 | - | Toshiba |
| 2859. | HN1B01F |
342 KB |
6 | Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) | Toshiba |
| 2860. | HN1B01FU |
343 KB |
6 | - | Toshiba |
| 2861. | HN1B01FU |
214 KB |
6 | Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) | Toshiba |
| 2862. | HN1B04F |
181 KB |
6 | Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) | Toshiba |
| 2863. | HN1B04FE |
312 KB |
6 | Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) | Toshiba |
| 2864. | HN1B04FU |
344 KB |
6 | - | Toshiba |
| 2865. | HN1B04FU |
219 KB |
6 | Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) | Toshiba |
| 2866. | HN1B26FS |
161 KB |
6 | Transistor Silicon NPN Epitaxial Type (PCT Process) | Toshiba |
| 2867. | HN1C01F |
188 KB |
4 | - | Toshiba |
| 2868. | HN1C01F |
205 KB |
4 | Transistor Silicon NPN Epitaxial Type (PCT Process) | Toshiba |
| 2869. | HN1C01FE |
181 KB |
3 | Transistor Silicon NPN Epitaxial Type (PCT Process) | Toshiba |
| 2870. | HN1C01FU |
188 KB |
- | - | Toshiba |
| 2871. | HN1C01FU |
136 KB |
4 | Transistor Silicon NPN Epitaxial Type (PCT Process) | Toshiba |
| 2872. | HN1C03F |
259 KB |
5 | - | Toshiba |
| 2873. | HN1C03F |
175 KB |
5 | Transistor Silicon NPN Epitaxial Type (PCT Process) | Toshiba |
| 2874. | HN1C03FU |
258 KB |
5 | - | Toshiba |
| 2875. | HN1C03FU |
166 KB |
5 | Transistor Silicon Npn Epitaxial Type (PCT Process) | Toshiba |
| 2876. | HN1C05FE |
205 KB |
5 | Transistor Silicon NPN Epitaxial Type (PCT Process) | Toshiba |
| 2877. | HN1C26FS |
134 KB |
3 | Transistor Silicon NPN Epitaxial Type (PCT Process) | Toshiba |
| 2878. | HN1D01F |
166 KB |
4 | - | Toshiba |
| 2879. | HN1D01F |
186 KB |
4 | Diode Silicon Epitaxial Planar Type | Toshiba |
| 2880. | HN1D01FE |
196 KB |
4 | Diode Silicon Epitaxial Planar Type | Toshiba |
| 2881. | HN1D01FU |
171 KB |
3 | - | Toshiba |
| 2882. | HN1D01FU |
120 KB |
3 | Diode Silicon Epitaxial Planar Type | Toshiba |
| 2883. | HN1D02F |
148 KB |
3 | - | Toshiba |
| 2884. | HN1D02F |
169 KB |
3 | Diode Silicon Epitaxial Planar Type | Toshiba |
| 2885. | HN1D02FE |
189 KB |
4 | Diode Silicon Epitaxial Planar Type | Toshiba |
| 2886. | HN1D02FU |
170 KB |
3 | - | Toshiba |
| 2887. | HN1D02FU |
123 KB |
3 | Diode Silicon Epitaxial Planar Type | Toshiba |
| 2888. | HN1D03F |
204 KB |
4 | - | Toshiba |
| 2889. | HN1D03FU |
213 KB |
5 | - | Toshiba |
| 2890. | HN1D03FU |
145 KB |
5 | Diode Silicon Epitaxial Planar Type | Toshiba |
| 2891. | HN1D04FU |
188 KB |
4 | Diode Silicon Epitaxial Planar Type | Toshiba |
| 2892. | HN1J02FU |
268 KB |
4 | - | Toshiba |
| 2893. | HN1J02FU |
173 KB |
4 | Field Effect Transistor Silicon P Channel Mos Type | Toshiba |
| 2894. | HN1K02FU |
242 KB |
4 | - | Toshiba |
| 2895. | HN1K02FU |
156 KB |
4 | Field Effect Transistor Silicon N Channel MOS Type | Toshiba |
| 2896. | HN1K03FU |
245 KB |
4 | - | Toshiba |
| 2897. | HN1K03FU |
160 KB |
4 | Field Effect Transistor Silicon N Channel MOS Type | Toshiba |
| 2898. | HN1K04FU |
176 KB |
4 | - | Toshiba |
| 2899. | HN1K04FU |
122 KB |
5 | Field Effect Transistor Silicon N Channel MOS Type | Toshiba |
| 2900. | HN1K05FU |
180 KB |
4 | - | Toshiba |